2SA1195 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1195
DESCRIPTION
·With TO-202 package
·High power dissipation
·Complement to type 2SC2483
APPLICATIONS
·For high voltage and general
purpose amplification
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25℃
T_C=25℃
VALUE
-160
-160
-6
-1.5
-0.5
2
15
175
-55~150
UNIT
V
V
V
A
A
W
℃
℃