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2SA1173 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Low Saturation Voltage
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-140V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.05
A
PC
Collector Power Dissipation
@ TC=25℃
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Product Specification
2SA1173
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark