2SA1129 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1129
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Large current capacity
·Complement to type 2SC2654
APPLICATIONS
·For low-frequency power amplifiers
and mid-speed switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_BB
Base current
P_T
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
T_a=25℃
VALUE
-30
-30
-7
-7
-15
-3.5
40
1.5
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃