2SA1116 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 2SA1116

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1116
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -200V(Min.)
·High Power Dissipation
·Complement to Type 2SC2607
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-200
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_B
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature
-200
V
-6
V
-15
A
-5
A
150
W
150
℃
-65~150 ℃
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