2SA1110 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – SI PNP EPITAXIAL PLANAR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1110
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SC2590
·Excellent current I_C characteristics of forward
current transfer ratio h_FE vs. collector
·High transition frequency f_T
·Optimum for the driver stage of a 40w to
60w output amplifier
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
Note) *: Without heat sink
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-120
-120
-5
-0.5
-1.0
1.2*
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃