2SA1093 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1093
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SC2563
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier
applicatios
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-120
-120
-5
-8
-0.8
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃