2SA1082 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

INCHANGE Semiconductor
isc Silicon PNP Transistor
isc RF Product Specification
2SA1082
DESCRIPTION
·High Voltage
APPLICATIONS
·Design For Amplifier and general purpose applications
.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
-120
V
V_CEO Collector-Emitter Voltage
-120
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-100 mA
P_D
Collector Power Dissipation@T_A=25℃ 400
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a} Thermal Resistance,Junction to Ambient
MAX
312
UNIT
℃/W
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