2SA1075 Datasheet, PDF (1/3 Pages) Fujitsu Component Limited. – SILICON HIGH SPEED POWER TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1075 2SA1076
DESCRIPTION
·With MT-200 package
·Complement to type 2SC2525,2SC2526
·Fast switching speed
·Excellent safe operating area
APPLICATIONS
·High frequency power amplifiers
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SA1075
2SA1076
Open emitter
V_CEO
Collector-emitter voltage
2SA1075
2SA1076
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-120
-160
-120
-160
-7
-12
120
150
-65~150
UNIT
V
V
V
V
V
A
W
℃
℃