2SA1069-Z Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1069-Z
DESCRIPTION
·Low Collector Saturation Voltage
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching regulators,DC/DC
converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-12
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-10
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-2.5
A
1.5
W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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