2SA1062 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – SILICON EPITAXAL BASE LESA TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1062
DESCRIPTION
·With TO-3PN package
·Complement to type 2SC2486
·High collector power dissipation
APPLICATIONS
·High power audio frequency amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-120
-120
-5
-7
-12
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃