2SA1040 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1040
DESCRIPTION
·High Current Capability
·Good Linearity of hFE
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Complement to Type 2SC2430
APPLICATIONS
·Designed for power switching , high frequency power
amplifer, switching regulator and DC/DC converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
-10
A
100
W
175
℃
Tstg
Storage Temperature
-55~175
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}