2SA1015 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

INCHANGE Semiconductor
isc Silicon PNP Transistor
isc Product Specification
2SA1015
DESCRIPTION
·High Voltage and High Current
Vceo=-50V(Min.），Ic=-150mA(Max)
·Excellent hFE Linearity
·Low Noise
·Complement to Type 2SC1815
APPLICATIONS
·Audio frequency general purpose amplifier Applications
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Curren
IB
Base Curren
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
-50
V
-50
V
-5
V
-150
mA
-50
mA
400
mW
125
℃
-55~125
℃
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