2SA1010 Datasheet, PDF (1/3 Pages) NEC – SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1010
DESCRIPTION
·Low Collector Saturation Voltage
·Fast Switching Speed
·Complement to Type 2SC2334
APPLICATIONS
·Developed for high-voltage high-speed switching, and is
ideal for use as a driver in devices such as switching reg-
lators, DC/DC converters, and high frequency power am-
plifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-100
V
V_CEO Collector-Emitter Voltage
-100
V
V_EBO Emitter-Base Voltage
-7.0
V
I_C
Collector Current-Continuous
-7.0
A
I_CM
Collector Current-Peak
-15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
@ T_a=25℃
P_C
Total Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-3.5
A
1.5
W
40
150
℃
-55~150 ℃
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