2SA1009 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1009
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1V(Max.)@ IC= -0.3A
·Fast Switching Speed
·Wide Reverse Bias Safe Operating Area
APPLICATIONS
·Designed for switching regulators, DC/DC converters and
High frequency power amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
-350
V
V_CEO Collector-Emitter Voltage
-350
V
V_EBO Emitter-Base Voltage
-7.0
V
I_C
Collector Current-Continuous
-2.0
A
I_CM
Collector Current-Peak
-4.0
A
P_C
Collector Power Dissipation@ T_a=25℃
15
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
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