2SA1008 Datasheet, PDF (1/5 Pages) NEC – SILICON POWER TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2331
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC/DC converters
·High frequency power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1008
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_BB
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25℃
T_C=25℃
VALUE
-100
-100
-7
-2.0
-4.0
-1.0
1.5
15
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃