2SA1007 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Current Capability

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1007
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -150V(Min.)
·Complement to Type 2SC2337
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-150
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature
-150
V
-6
V
-10
A
100
W
150
℃
-55~150 ℃
isc website：www.iscsemi.cn
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