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| 2SA1006A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1006A
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SC2336A
APPLICATIONS
·Adudio frequency power amplifier
·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
-3.0
A
Collector Power Dissipation@ Ta=25â
1.5
PC
W
Total Power Dissipation@ TC=25â
25
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
isc Websiteï¼www.iscsemi.cn
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