 English |
|
|
|
|
|
|
|
| 2P6M Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – Electric blanket,electronic jar,various temperature | |||
| |||
|
INCHANGE Semiconductor
isc Thyristors
APPLICATIONS
·Electric blanket,electronic jar,various temper-
ature control.
·Electric sewing machine,speed control of mi-
niature type motor.
·Light display equipment , lamp dimmer such
as a display for entertainment.
·Automatic gas lighter, battery charger.
·Solid state static switches etc.
isc Product Specification
2P6M
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) On-state current
ITSM Surge non-repetitive on-state current
PGM Peak gate power dissipation
PG(AV) Average gate power dissipation
IFGM Peak gate forward current
VRGM Peak gate reverse voltage
Tj
Junction temperature
MIN
600 (note:RGK=1kΩ)
600 (note:RGK=1kΩ)
2(Tc=77â, θ=180°Single phase(1/2wave)
20
0.5 (f â¥50Hz, Duty â¤10%)
0.1
0.2 (f â¥50Hz, Duty â¤10%)
6
-40 to + 125
UNIT
V
V
A
A
W
W
A
V
â
ELECTRICAL CHARACTERISTICS (TC=25â unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current VRM=VRRM,Tj=125â,RGK=1kΩ
IDRM Repetitive peak off-state current VDM=VDRM,Tj=125â,RGK=1kΩ
VTM On-state voltage
ITM=4A
IGT Gate-trigger current
VDM=6V;RL=100Ω,RGK=1kΩ
VGT Gate-trigger voltage
VDM=6V;RL=100Ω,RGK=1kΩ
VGD Gate non-trigger voltage
VDRM=1/2VDRM,Tj=125â,RGK=1kΩ
IH
Holding current
VD=24V; RGK=1kΩ,ITM=4A
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
100 μA
100 μA
1.8 V
100 μA
0.8 V
0.2
V
5 mA
10 â/W
isc websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese