2N6898 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – POWER MOS FIELD-EFFECT TRANSISTORS

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
2N6898
DESCRIPTION
·SOA is power-dissipation limited
·Nanosecond switching speeds
·Linear transfer characteristics
·High input impedance
·Majority carrier device
APPLICATIONS
· The 2N6898 is designed for application such as
switching regulators,switching converters,motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-driver power
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
-100
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃
-25
A
Total Dissipation@TC=25℃
150
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
0.83 ℃/W
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