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| 2N6835 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
850
V
VCEO(SUS) Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
6
A
IBM
Base Current-Peak
12
A
PC
Collector Power Dissipation@TC=25â 150
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
â/W
isc Product Specification
2N6835
isc websiteï¼www.iscsemi.cn
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