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| 2N6771 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- 2N6771
= 350V(Min)- 2N6772
= 400V(Min)- 2N6773
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
2N6771
450
VCEV
Collector-Emitter Voltage
VBE= -1.5V
2N6772
550
V
2N6773
650
2N6771
300
VCEO(SUS) Collector-Emitter Voltage 2N6772
350
V
2N6773
400
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation@TC=25â 150
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
â/W
isc Product Specification
2N6771/6772/6773
isc websiteï¼www.iscsemi.cn
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