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2N6767 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel Power MOSFETs, 15A, 350V/400V | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6767
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for fast switching speeds
·IDSS ãRDS(ON) ï¼specified at elevated temperature
·Low drive requirements
APPLICATIONS
designed for high power ,high speed application ,such as
switching applies,UPS,AC and DC motor controls ,
relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
350
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37â
12
A
Total Dissipation@TC=25â
150
W
Max. Operating Junction Temperature -55~150 â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.83 â/W
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