2N6758 Datasheet, PDF (1/2 Pages) Microsemi Corporation – N-CHANNEL MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6758
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for fast switching speeds
·I_DSS 、R_DS(ON) ,specified at elevated temperature
·Low drive reqirements
APPLICATIONS
designed for high power ,high speed application ,such as
switching applies,UPS,AC and DC motor controls ,
relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
200
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃
9
A
Total Dissipation@TC=25℃
75
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.67 ℃/W
isc website：www.iscsemi.cn
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