2N6753 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6753 2N6754
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low saturation voltage
·Fast switching speed
APPLICATIONS
·Off-line power supplies
·High-voltage inverters
·Switching regulators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N6753
2N6754
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_D
Total Power Dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
900
1000
500
8
10
5
150
-65~175
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.0
UNIT
℃/W