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| 2N6739 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6739
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for use in high-voltage, high-speed , power switc-
hing in inductive circuit , they are particularly suited for 115
and 220V switchmode applications such as switching regu-
lators, inverters, DC-DC and converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage-VBE= -1.5V
550
V
VCEX Collector-Emitter Voltage-VBE= -1.5V
400
V
VCEO Collector-Emitter Voltage
350
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
TC=25â
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
4
A
100
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.25 â/W
isc Websiteï¼www.iscsemi.cn
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