2N6704 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6704
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 130V(Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for converters, inverters, pulse-width-modulated
regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CEV Collector-Emitter Voltage-V_BE= -1.5V
180
V
V_CEO Collector-Emitter Voltage
130
V
V_EBO Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
7
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
5
A
50
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
2.5 ℃/W
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