2N6703 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6703
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 110V(Min)
·High Switching Speed
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for converters, inverters, pulse-width-modulated
regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage-VBE= -1.5V
160
V
VCEO Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
5
A
50
W
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 ℃/W
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