2N6687 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6687
DESCRIPTION
With TO-3 package
Fast switching speed
Low collector saturation voltage
APPLICATIONS
Designed for high-power switching
circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
280
180
8
25
50
200
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
0.875
UNIT
/W