2N6676 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,175W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6676 2N6677 2N6678
DESCRIPTION
With TO-3 package
High voltage capability
Fast switching speeds
Low saturation voltage
APPLICATIONS
Designed for high voltage switching
applications such as :
Off-line power supplies
Converter circuits
Pulse width modulated regulators
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6676
V_CBO
Collector-base voltage 2N6677
2N6678
2N6676
V_CEO
Collector-emitter voltage 2N6677
2N6678
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_c=25
VALUE
450
550
650
300
350
400
8
15
20
5
175
200
-65~200
UNIT
V
V
V
A
A
A
W