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| 2N6674 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·High Power Dissipation
·High Switching Speed
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)- 2N6674
= 400V(Min)- 2N6675
APPLICATIONS
Designed for high voltage switching applications such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
2N6674
450
VCBO Collector-Base Voltage
V
2N6675
650
2N6674
300
VCEO Collector-Emitter Voltage
2N6675
400
2N6674
450
VCEX Collector-Emitter Voltage
V
2N6675
650
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
5.0
A
Collector Power Dissipation@Ta=25â
6
PC
W
Collector Power Dissipation@TC=25â 175
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
â/W
isc Product Specification
2N6674/6675
isc Websiteï¼www.iscsemi.cn
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