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2N6667 Datasheet, PDF (1/2 Pages) ON Semiconductor – DARLINGTON POWER TRANSISTORS(PNP SILICON ) | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6667
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -5A
·Complement to Type 2N6387
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
Base Current-DC
Collector Power Dissipation
PC
TC=25â
Collector Power Dissipation
Ta=25â
Tj
Junction Temperature
-250
mA
65
W
2
150
â
Tstg
Storage Temperature Range
-65~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.92 â/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 â/W
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
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