2N6666 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(65W)

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6666
DESCRIPTION
·High DC Current Gain-
: h_FE = 1000(Min)@ I_C= -3A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -40V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat) = -2.0V(Max)@ I_C= -3A
·Complement to Type 2N6386
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-40
V
V_CEO
Collector-Emitter Voltage
-40
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-8
A
I_CM
Collector Current-Peak
-15
A
I_BB
Base Current-DC
Collector Power Dissipation
P_C
T_C=25℃
Collector Power Dissipation
T_a=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-250
mA
65
W
2
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
1.92 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
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