2N6609 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Complementary Silicon Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N6609
DESCRIPTION
·Excellent Safe Operating Area
·High DC Current Gain-hFE=15(Min)@IC = -8A
·Low Saturation Voltage-
: VCE(sat)= -1.4V(Max)@ IC = -8A
·Complement to Type 2N3773
APPLICATIONS
·Designed for high power audio ,disk head positioners and
other linear applications, which can also be used in power
switching circuits such as relay or solenoid drivers, DC-DC
converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEX
Collector-Emitter Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-16
A
ICP
Collector Current-Peak
-30
A
IB
Base Current-Continuous
-4
A
IBP
Base Current-Peak
-15
A
PC
Collector Power Dissipation @TC=25℃ 150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
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