2N6582 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6582
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min)
·High Current Capability
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5 V(Max)@ IC = 10A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 125
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
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