2N6581 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6581
DESCRIPTION
·Excellent Safe Operating Area
·High Voltage,High Speed
·Low Saturation Voltage
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
APPLICATIONS
·Off-line power supplies
·Switching amplifiers
·Inverters/Converters
·Motor speed control circuits
·Switching regulator
·Solenoid& relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
550
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9.0
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25℃ 125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc website：www.iscsemi.com
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