2N6574 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6574
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO = 275V(Min.)
·Fast Switching Speed
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 25A
APPLICATIONS
·Designed for converters, inverters, pulse-width- modulated
regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
600
V
VCEO Collector-Emitter Voltage
275
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
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