2N6544 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,125W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6544
DESCRIPTION
·Excellent Safe Operating Area
·High Voltage,High Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for 115 and 220 volt line operated switch-mode
applications such as:
·Switching regulators
·PWM inverters and motor controls
·Solenoid and relay drivers
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
650
V
VCEO(SUS) Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
PC
Collector Power Dissipation@TC=25℃ 125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}