2N6533 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2N6533
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A
·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 120V(Min.)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ IC= 3A
APPLICATIONS
·Power switching
·Hammer drivers
·Series and shunt regulators
·Audio amplifiers
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCER
Collector-Emitter Voltage RBE= 100Ω
VCEV
Collector-Emitter Voltage VBE= -1.5V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Current-peak
IB
Base Current
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
120
V
120
V
120
V
120
V
5
V
8
A
15
A
250
mA
65
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.92
UNIT
℃/W
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