|
2N6514 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6514
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 5A
·Colletor-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min.)
·Fast Switching Speed
APPLICATIONS
·Designed for use in off-line power supplies, high voltage
inverters, switching regulators, ignition systems and
deflection circuits.
Absolute maximum ratings(Ta=25â)
SYMBOL
PARAMETER
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
300
V
350
V
6
V
7
A
10
A
3
A
120
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.46 â/W
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
|
▷ |