2N6511 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6511
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 4A
·Colletor-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min.)
·Fast Switching Speed
APPLICATIONS
·Designed for use in off-line power supplies, high voltage
inverters, switching regulators, ignition systems and
deflection circuits.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEO
VCER
VCBO
Collector-Emitter Voltage
Collector-Emitter Voltage
RBE= 50Ω
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
250
V
300
V
300
V
6
V
7
A
10
A
3
A
120
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W
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