2N6500 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6500
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 90V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in high-current, high-speed switching
circuits such as:low-distortion power amplifiers,oscillators,
switching regulators, series regulators, converters, and
inverters.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
VCER
Collector-Emitter Voltage
Collector-Emitter Voltage RBE= 50Ω
90
V
110
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
PD
Total Power Dissipation@TC=25℃
TJ
Junction Temperature
T_stg
Storage Temperature
3
A
35
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
5.0
UNIT
℃/W
isc Website：www.iscsemi.cn