2N6497 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,80W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N6497/6498/6499
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 250V(Min)- 2N6497
= 300V(Min)- 2N6498
= 350V(Min)- 2N6499
·DC Current Gain-
: h_FE= 10-75@I_C= 2.5A
APPLICATIONS
·Designed for high voltage inverters, switching regulators
and line operated amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
2N6497
350
VCBO Collector-Base Voltage 2N6498
400
V
2N6499
450
2N6497
250
VCEO Collector-Emitter Voltage 2N6498
300
V
2N6499
350
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
PD
Total Power Dissipation@TC=25℃
80
W
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Rresistance,Junction to Case
MAX UNIT
1.56 ℃/W
isc Website：www.iscsemi.cn