2N6496 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6496
DESCRIPTION
·High Speed-tf= 0.5μs (Max)
·Low Saturation Voltage-
VCE(sat)=1.0V(Min.)@ IC= 8A
APPLICATIONS
·Designed for use in switching regulators, inverters, wide-
band amplifiers and power oscillators in industrial and
commercial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
150
V
VCER
Collector-Emitter Voltage RBE≤ 50Ω
130
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation @TC=25℃
140
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.25 ℃/W
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