2N6489 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6489 2N6490 2N6491
DESCRIPTION
With TO-220 package
Excellent safe operating area
Complement to type 2N6486 2N6487
2N6488 respectively
APPLICATIONS
Power amplifier and medium speed
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6489
V_CBO
Collector-base voltage 2N6490
2N6491
2N6489
V_CEO
Collector-emitter voltage 2N6490
2N6491
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
VALUE
-50
-70
-90
-40
-60
-80
-5
-15
-5
75
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.67
UNIT
/W