2N6473 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON SWITCHING TRANSITORS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6473 2N6474
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·General-purpose medium power for
switching and amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N6473
2N6474
Open emitter
V_CEO
Collector-emitter voltage
2N6473
2N6474
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
VALUE
110
130
100
120
5
4
2
40
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
3.125
UNIT
℃/W