2N6471 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6470 2N6471 2N6472
DESCRIPTION
With TO-3 package
Low collector saturation voltage
Excellent safe operating area
High gain at high current
APPLICATIONS
General-purpose types of switching
and linear-amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N6470
V_CBO
Collector-base voltage 2N6471 Open emitter
2N6472
2N6470
V_CEO
Collector-emitter voltage 2N6471 Open base
2N6472
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
50
70
90
40
60
80
5
15
5
125
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.4
UNIT
/W