2N6465 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6465 2N6466
DESCRIPTION
With TO-66 package
Excellent safe operating area
Complement to type 2N6467 2N6468
APPLICATIONS
For use in audio amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N6465
2N6466
Open emitter
V_CEO
Collector-emitter voltage
2N6465
2N6466
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_D
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
110
130
100
120
5
4
40
150
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
2.5
UNIT
/W