2N6421 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – SI PNP POWER BJT

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N6421
DESCRIPTION
·Contunuous Collector Current-IC= -2A
·Power Dissipation-PC= 35W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75 V(Max)@ IC = -1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-375
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2.0
A
ICM
Collector Current-Peak
-5.0
A
IB
Base Current
-1.0
A
PC
Collector Power Dissipation@TC=25℃
35
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0
℃/W
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