2N6379 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – HIGH-POWER PNP SILICON

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N6379
DESCRIPTION
·Low Collector Saturation Voltage
·High DC Current Gain
·High Power Dissipation
APPLICATIONS
·Designed for use in industrial-military power amplifier
and switching circuit application.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-140
V
V_CE0
Collector-Emitter Voltage
-120
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current-Continuous
-50
A
I_B
Base Current-Continuous
-20
A
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
250
W
-65~200 ℃
-65~200 ℃
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