2N6372 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-66 package
Low collector saturation voltage
Excellent safe operating area
APPLICATIONS
Designed for switching and wide-band
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Product Specification
2N6372 2N6373 2N6374
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6372
V_CBO
Collector-base voltage 2N6373
2N6374
2N6372
V_CEO
Collector-emitter voltage 2N6373
2N6374
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
90
70
50
80
60
40
6
6
40
150
-65~200
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W